igc168 t17 0 s8rh edited by in fineon technologies , ifag ipc td vls , l779 3n , l7793u, l7793f, rev 0.9 , 27 .0 6.2014 igbt 3 power chip features : ? ? ? ? ? this chip is used for: ? applications: ? chip type v ce i c die size package igc168 t170s8 r h 17 00v 15 0a 13.38 x 12.58 mm 2 sawn on foil mechanical p arameter s raster size 13.38 x 12.58 mm 2 emitter pad size (incl. gate pad) 11.159 x 10.353 gate pad size 1.674 x 0.899 area total 168.3 thickness 190 m wafer size 200 mm max.possible chips per wafer 142 passivation frontside photoimide pad metal 3200 nm alsicu backside metal ni ag C system suitable for epoxy and soft solder die bonding die bond e lectrically conductive glue or solder wire bond al, < 500m reject i nk dot s ize ? 0.65mm ; max 1.2mm storage environment for original and sealed mbb bags ambient atmosphere air, temperature 17c C 25c, < 6 month for open mbb bags acc. to iec62258 - 3: atmosphere >99% nitrogen or inert gas, humidity <25%rh , temperature 17c C 25c, < 6 month g c e
igc168 t17 0 s8rh edited by in fineon technologies , ifag ipc td vls , l779 3n , l7793u, l7793f, rev 0.9 , 27 .0 6.2014 maximum r atings parameter symbol value unit collector - e mitter voltage , t vj =25 ? c v ce 17 00 v dc collector current, limited by t vj max i c 1 ) a pulsed collector current, t p limited by t vj max i c , p u l s 450 a gate emitter voltage v ge ? 20 v j unction temperature range t vj - 40 ... +175 c o perating junction temperature t vj - 40 ...+150 ? c short circuit data 2 ) v ge = 15v, v cc = 10 00v, t vj = 150c t sc 10 s reverse bias safe operating area 2 ) (r bsoa) i c , m a x = 3 00a, v c e , m a x = 17 00v t vj ? 150 c 1 ) depending on thermal properties of assembly 2 ) not subject to production test - verified by design/characterization static c haracteristic s (tested on wafer ), t vj =25 ? paramet er symbol conditions value unit min. typ. max. collector - e mitter breakdown voltage v (br)ces v ge =0v , i c = 2 ma 17 00 v collector - e mitter saturation voltage v ce sat 3) v ge =15v, i c =15 0a 1.5 5 1.8 5 2.1 5 gate - e mitter threshold voltage v ge(th) i c =6 ma , v g e = v ce 5.2 5.8 6.4 zero gate voltage collector current i ces v ce =17 00v , v ge =0v 8 a gate - e mitter leakage current i ges v ce =0v , v ge =2 0v 3 00 na integrated gate resistor r g 5 ? 3) vcesat tested at lower current dynamic c haracteristic s ( not subje ct to production test - verified by design / characterization ) , t vj =25 ? parameter symbol conditions value unit min. typ. max. input capacitance c i e s v ce = 25 v , v ge = 0v , f = 1 mh z 135 00 pf reverse transfer capacitance c r e s 430
igc168 t17 0 s8rh edited by in fineon technologies , ifag ipc td vls , l779 3n , l7793u, l7793f, rev 0.9 , 27 .0 6.2014 further e lectrical c haracteristic switching characteristics and thermal properties are depending strongly on module design and mounting technology and can therefore not be specified for a bare die.
igc168 t17 0 s8rh edited by in fineon technologies , ifag ipc td vls , l779 3n , l7793u, l7793f, rev 0.9 , 27 .0 6.2014 chip d rawing e = emitter g = ga te t = test pad do not contact e g t e e e e e e e e
igc168 t17 0 s8rh edited by in fineon technologies , ifag ipc td vls , l779 3n , l7793u, l7793f, rev 0.9 , 27 .0 6.2014 description aql 0,65 for visual inspection according to failure catalogue electrostatic discharge sensitive device according to mil - std 883 revision h istory version subjects (major changes since last revision) date published by infineon technologies ag 81726 munich, germany ? 2014 infineon technologies ag all rights reserved. legal disclaimer the informati on given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, in fineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non - infringement of intellectual property rights of any third party. information for further information on technology, de livery terms and conditions and prices, please contact the nearest infineon technologies office ( www. infineon.com ) . warnings due to technical requirem ents, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. the infineon technologies component described in this data sheet may be used in life - support devices or sy stems and/or automotive, aviation and aerospace applications or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life - support, automotive, aviat ion and aerospace device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if the y fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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